Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > 800V BTA216B-800B triac suitable for general purpose AC switching

Contact Supplier

Mr. John chang

Leave a message

Contact Now

800V BTA216B-800B triac suitable for general purpose AC switching

$0.18

3000-9999
Piece/Pieces
$0.15

≥10000
Piece/Pieces

option:

VDRM:800V
VRRM:800V
IGT:≤10mA
IT(RMS):16A
IGMl:2A
di/dt:100A/μs

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-BTA216B-800B

Brand: YZPST

Place Of Origin: China

IT(RMS): 16A

VDRM: 800V

VRRM: 800V

IGT: ≤10mA

Di/dt: 100A/μs

IGM: 2A

VGM: 5W

PGM: 5W

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000000

Transportation: Ocean,Land,Air,Others

Place of Origin: CHINA

Supply Ability: 1000000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

BTA216B-600B/800B TRIACS

DESRCRIPTION:

Due to separation glass passivation, these devices have good performance at dv/dt and reliability. The Triac series is suitable for general purpose AC switching. They can be used as an On-Off function in the applications such as static relays, heating regulation, or for phase control operation in light dimmers, motor speed controllers.

YZPST-BTA216B-800B

MAIN FEATURES

Symbol	Value	Unit
IT(RMS)	16	A
VDRM/VRRM	600/800	V
IGT	≤10	mA

ABSOLUTE MAX I MUM RATINGS

Symbol	PARAMETER		Value	Unit
IT(RMS)	RMS on-state current(full sine wave)	TO-263.Non-Ins TC≤99℃	16	A
	Non repetitive surge peak on-state current	t=20ms	140
ITSM	(full sine wave, Tj=25℃)	t= 16.7ms	150	A
I2t	I2t Value for fusing	t= 10ms	98	A2S
di/dt	Repetitive rate of rise of on-state Current after triggering	ITM = 20 A; IG = 0.2 A dIG/dt = 0.2 A/us	100	A/μs
IGM	Peak gate current,	—	2	A
VGM	Peak gate voltage	—	5	W
PGM	Peak gate power	—	5	W
PG(AV)	Average gate power	over any 20 ms period	0.5	W
Tstg	Storage junction temperature range	-40 to +150		℃
Tj	Operating junction temperature range	125		℃

ELECTRICAL CHARACTERISTICS (Tj = 25。C, unless otherwise specified)
STATIC CHARACTERISTICS

Symbol	Parameter	Test Condition	Quadrant	Value			Unit
Symbol	Parameter	Test Condition	Quadrant	MIN	TYPE	MAX	Unit
IGT	Gate trigger current	VD= 12V, IT=0. 1A	Ⅰ-Ⅱ-Ⅲ	-	-	10	mA
		VD= 12V, IT=0. 1A		-	0.7	1.5
VGT	Gate trigger voltage	VD=400V, IT=0. 1A,Tj= 125°C		0.25	0.4	-	V
VT	On-state voltage	IT=20A		-	1.2	1.5	V
IH	Holding current	VD= 12V, IGT=0. 1A	Ⅰ-Ⅱ-Ⅲ	-	-		mA
			Ⅰ-Ⅲ	-	-	60	mA
IL	Latching current	VD= 12V, IGT=0. 1A	Ⅱ	-	-	90	mA
ID	Off-state leakage current	VD = VDRM(max); Tj= 125 ˚C		-	0.1	0.5	mA