Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > Power control thyristor 6500V hvdc thyristor KP1500

Power control thyristor 6500V hvdc thyristor KP1500

Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
1
Transportation:
Ocean,Air
Port:
Shanghai
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  • Product Description
Overview
Product Attributes

Model No.YZPST-KP1500A6500V-1

BrandYZPST

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity100

TransportationOcean,Air

Place of OriginChina

Supply Ability500

CertificateISO9001-2008,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Power Control Thyristors

YZPST-KP1500A6500V 

Power control thyristor 6500V hvdc thyristor KP1500

Features:  Spoke Amplifying Gate Configuration. High dV/dt Capability.  All Diffused Structure. Pressure Assembled Device.


             Power Control Thyristor

Conducting - on state


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

 1500


A

Sinewave,180o conduction,Tc=70oC

RMS value of on-state current

ITRMS

 

  2800


A

Nominal value

Peak one cpstcle surge

(non repetitive) current

 

ITSM

 

30000


27000

 

A


A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

10x106

 

A2s

8.3 msec and 10.0 msec

Latching current

IL

 

    1500

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

     250

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM


2.20


V

ITM = 3000 A

Critical rate of rise of on-state

current (5)

di/dt


      300


A/ms

Switching from VDRM£ 800 V,

non-repetitive

Critical rate of rise of on-state

current

di/dt


      100


A/ms

Switching from VDRM£ 800 V



Gating


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200


W

tp = 40 us

Average gate power dissipation

PG(AV)

 

5

 

W


Peak gate current

IGM

 

20

 

A


Gate current

IGT

 

300 

 

mA


Gate voltage

VGT

0.30

3.5 

 

V



Dynamic


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 



ms


Turn-off time (with VR = -50 V)

tq

 



 

ms




THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125


oC


Storage temperature

Tstg

-40

+150

 

oC


Thermal resistance - junction to case

RQ (j-c)


0.012


 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)


0.002


 

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

 8000


10000


 

lb.

kN


Weight

W




Lb.

Kg.


  * Mounting surfaces smooth, flat and greased

  Note : for case outline and dimensions, see case outline drawing 

 Power Control Thyristor 1500A for Phase Control




Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor

Home > Products > Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor > Power control thyristor 6500V hvdc thyristor KP1500
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