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High Frequency High Voltage Diode 500mA

  • $1.2
    ≥100000
    Piece/Pieces
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
100000 Piece/Pieces
Transportation:
Ocean,Air
Port:
SHANGHAI
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  • Product Description
Overview
Product Attributes

Model No.YZPST-CL05-08

BrandYZPST

TypeIntrinsic Semiconductor

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2015,ROHS

HS Code85411000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

High Frequency High Voltage Diode

YZPST - CL05-08

Characteristics

1. High junction temperature up to130℃

2. Low forward voltage drop, and small current leakage

3. Avalanche breakdown protection

4. Max reverse recovery time to 40nS

4. Excellent properties against HV surge impact

5. Axial leading wires which are weldable

6. Epoxy package with anti-corrosion properties on surface

Application

• Rectification for microwave oven

• Industrial microwave power supplies

• HF X ray source

• Laser power supply

• Voltage multiplying circuits

• Rectification of power supplies for other electronic devices

1.Main Specification

 

No.

 

Item

 

Symbol

 

  Unit

 

Rating

 

Conditions


 1



   Repetitive Peak Reverse Voltage


   VRRM


   KV


 8



    2


 Average Forward Current

 

 IF (AV)

 

 mA

 

500

Tamb=60 oC

50HZ Sine-half Wave

Rectification Average Value

 

    3

 

 Forward Surge Current

 

 IFSM

 

 A

 

15

 Tamb=25 oC

50HZ Sine-half Wave,One Shot

 

 4


Reverse Surge Current

 

 IRSM


μA  

 

-

 

Pulse width 1ms triangle wave single pulse

 

 5

 

Maximum Junction Temperature

 

 

  Tjmax

 

     oC

 

130



 6


Storage Temperature


 Tstg

 

oC


-40~+130

















2.  Electric Specification

 

 NO.

 

Item

 

Symbol

   Unit

 

   Rating

 

Test conditions


1


 Forward Voltage Drop


VFM


V


  15max


  IFM=500mA

2

Normal Temperature Reverse Current

IRM1

μA

5max

VRM=8KV


3


 High Temperature Reverse Current


IRM2


μA


5max

   Tamb=100oC

   VRM=10KV


4


 Reverse Breakdown Voltage


VZ


 KV


   8

 

          IR=300mA


5


 Reverse Recovery Time


trr


nS


    100


IF=2mA, IRM=4mA  90%











(Tamb=25 oC, unless otherwise specified)

3.  Application   

For high voltage rectification;

4. Derating of Forward Current

1

5.Dimensions (in mm))

3



Product Categories : Semiconductor Plastic Package > Plastic Package Diode

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