Home > Products > Semiconductor Module Devices > Thyristor Module > 1600V High power thyristor assembly for phase control

Contact Supplier

Mr. John chang

Leave a message

Contact Now

1600V High power thyristor assembly for phase control

$310

1-19
Piece/Pieces
$230

≥20
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

Contact Now

 Chat Now

Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

< >

Overview

Product Attributes

Model No.: YZPST-KP641-16E

Brand: YZPST

V RRM: 1600v

V DRM: 1600v

I T(AV): 641a

I TSM: 9900a

I RRM: 30ma

I DRM: 30ma

V TM: 1.5v

Threshold Voltage V T(TO): 0.99v

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 100

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9000

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

High Power Thyristor ASSEMBLY

FOR PHASE CONTROL APPLICATIONS

Type: YZPST-KP641/16E

ELECTRICAL CHARACTERISTICS AND RATINGS

Parameter	Symbol	Maximu m Limits	Units	Conditions
Repetitive peak reverse voltage	V RRM	1600	V
Repetitive peak off state voltage	V DRM	1600	V
Average value of on-state current	I T(AV)	641	A	Sinewave,180 ^o conduction,T sink =70 ℃
Peak one cycle surge (non repetitive) current	I TSM	9900	A	10.0 msec (50Hz), sinusoidal wave-shape, 180 o conduction, T j = 125 ℃
	I RRM	30	mA	Tj = 125 ℃
	I DRM	30	mA	Tj = 125 ℃
Peak on-state voltage	V TM	1.5	V	Tj = 125 ℃ ITM=1000A
Threshold voltage	V T(TO)	0.99	V	T j =1 25 ℃
Slope resistance	r T	0.52	mΩ	T j =1 25 ℃
Average gate power dissipation	P G(AV)	3	W
Gate current	I GT	300	mA	V D = 6 V;R L = 3 ohms;T j = +25 ℃
Gate voltage	V GT	3.5	V	V D = 6 V;R L = 3 ohms;T j = 0-125 ℃
Latching current	I L	1000	mA	V D = 24 V; R L = 12 ohms
Holding current	I H	300	mA	V D = 24 V; I = 2.5 A
Critical rate of voltage rise	dV/dt	1000	V/s	VD=2/3VDRM
Critical rate of rise of on-state current	di/dt	200	A/ s	Switching from V DRM 1000 V, non-repetitive
Operating temperature	T	-30-125	℃
Storage temperature	T stg	-30-125	℃