Home > Products > Semiconductor Module Devices > Thyristor Module > TT320N16SOF Dual Thyristor Modules Thyristor with amplifying gate

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TT320N16SOF Dual Thyristor Modules Thyristor with amplifying gate

$55

10-99
Piece/Pieces
$43

≥100
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-TT320N16SOF

Brand: YZPST

IT(AV)M: 320A

ITRMSM: 520A

ITSM: 8.2kA

I2t: 335kA2S

VDRM/VRRM: 1600V

Supply Ability & Additional Information

Productivity: 100000

Transportation: Ocean,Air

Place of Origin: China

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Dual Thyristor Modules
TYPE: YZPST-TT320N16SOF
Features
· Heat transfer through aluminium nitride ceramic isolated metal baseplate
· Precious metal pressure contacts for high reliability
· Thyristor with amplifying gate
Typical Applications
· DC motor control
· Temperature control

· Professional light dimming

Maximum Ratings

Symbol	Condition	Ratings	Unit
IT(AV)M	Single phase ，half wave ，sin 180° conduction ;TC=85°C	320	A
ITRMSM	Single phase ，half wave ，sin 180° conduction	520	A
ITSM	Tj= Tj MAX	8.2	kA
I2t	Tj= Tj MAX	335	kA2S
VDRM/VRRM	Tj= Tj MAX	1600	V
di/dt	non-repetitive	100	A/us
Viso	A.C. 1minute/1S	3000/3600	V
Tj		-40 ~ + 130	°C
Tstg		-40 ~ + 130	°C
W	About	410	g

Electrical Characteristics

Symbol	Condition	Ratings	Unit
IDRM /IRRM	AtVDRM ，Single phase ，half wave ，Tj= Tj MAX	60	A
VTM	On-State Current 750A ，Tj=130°C	1.47	V
VT(TO)	Tj= Tj MAX	0.77	V
T	Tj= Tj MAX	0.58	Ω
RK1G1		-	Ω
RK2G2		-	Ω
tgd	Tj=25°C;VD=0.4VDRM ; ITM=ITAV	2	us
tq	dvD/dt=50V/us; Tj= Tj MAX; ITM=ITAV	200	us
IGT/VGT	Tj=25°C ，IT=1A ，VD=6V	150 / 2.0	mA/V
VGD	VD=67%VDRM	0.25	V
DV/DT	VD=67%VDRM	1000	V/us
IH	Tj=25°C	150	A
IL	Tj=25°C	380	A
Rth(j-c)	Thermal resistance Junction to case; per module	0.055	K/W
Rth(c-h)	Thermal resistance case to heatsink; per module	0.0275	K/W