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  • High Surge rating high power fast rectifier diode
  • High Surge rating high power fast rectifier diode
  • High Surge rating high power fast rectifier diode
  • High Surge rating high power fast rectifier diode

High Surge rating high power fast rectifier diode

  • $185
    1-19
    Piece/Pieces
  • $145
    ≥20
    Piece/Pieces
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
1 Piece/Pieces
Transportation:
Ocean,Air
Port:
SHANGHAI
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  • Product Description
Overview
Product Attributes

Model No.YZPST-M2639ZC450

BrandYZPST

Manufacturing TechnologyDiscrete Device

MaterialCompound Semiconductor

VRRM4500V

IRRM20 MA 150 MA

IF(AV)M2639A

IFRMS4922A

IFSM27.5kA

I2t3.79x103kA2s

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity100

TransportationOcean,Air

Place of OriginCHINA

Supply Ability5000

CertificateISO9001-2015,ROHS

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

FAST Rectifier

YZPST-M2639ZC450

 High Surge rating high power fast Rectifier Diode

Fast Recovery Diode

GENERAL PURPOSE HIGH POWER FAST RECTIFIER

Features:

. All Diffused Structure

. High Surge rating                

. Soft Reverse Recovery

. Rugged Ceramic Hermetic Package

. Pressure Assembled Device

Typical Applications:

. Rectifier for Drives Applications

. Medium voltage converters

. Pulsed power applications

. Crowbar Applications

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

VRRM (1)

VRSM (1)

4500

4500

VRRM = Repetitive peak reverse voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage

IRRM

20 mA

150 mA 

Conducting - on state    

Parameter

Symbol

Min

Max.

Typ

Units

Conditions

Max. Average value of on-state current

IF(AV)M

 

2639

 

A

Sinewave,180oconduction,Tc=55oC

RMS value of on-state current

IFRMS

 

4922

 

A

Nominal value

Peak one cycle surge

(non repetitive) current

IFSM

 

27.5

 

kA

Tj=150°C, VR=0,8VRRM, tp=10ms

I square t

I2t

 

3.79x103

 

kA2s

10 msec

Peak on-state voltage

VFM

 

2.25

 

V

IFM =3000 A; Tj = 150 oC

Threshold  voltage

VFO

 

1.38

 

 

Tj = 150 oC

Forward slope resistance

rF

 

0.29

 

mΩ

Tj = 150 oC

Reverse Recovery Current (4)

IRM(REC)

 

-

280

A

IFM = 1000 A; dIF/dt = 60 A/ms,

Tj = 150 oC

Reverse Recovery Charge (4)

Qrr

 

-

2300

mC

 

Reverse Recovery Time (4)

tRR

 

-

8.5

ms

THERMAL AND MECHANICAL CHARACTERISTICS  

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+150

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

0.011

 

 

K/W

Double sided cooled

Single sided cooled

Thermal resistance - case to sink

RQ (c-s)

 

0,.022

 

 

K/W

Double sided cooled

Single sided cooled

Mounting force

P

37

47

-

kN

 

Weight

W

 

 

1700

g

About

CASE OUTLINE AND DIMENSIONS

YZPST-M2639ZC450-1



Sym

A

B

C

D

H

mm

109

73

98

3.5×3

36±1




Product Categories : Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode

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