Home > Products > Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode > High power Fast recovery diodes 4500V

High power Fast recovery diodes 4500V

  • $25
    1-99
    Piece/Pieces
  • $15
    ≥100
    Piece/Pieces
Payment Type:
T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
1 Piece/Pieces
Transportation:
Ocean,Air
Port:
SHANGHAI
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  • Product Description
Overview
Product Attributes

Model No.YZPST-SD233N/R-45

BrandYZPST

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity1000

TransportationOcean,Air

Place of OriginCHINA

Supply Ability5000

CertificateISO9001-2015,ROHS

PortSHANGHAI

Payment TypeT/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

FAST RECOVERY DIODES

PSTSD233N/R

Features

… High power Fast Recovery Diode series

… 1.0 to 2.0 μs recovery time

… High voltage ratings up to 5000V

… High current capability

… Optimized turn on and turn off characteristics

… Low forward recovery

… Fast and soft reverse recovery

… Compression bonded encapsulation

… Stud version B-8

… Maximum junction temperature 125°C

Typical Applications

… Snubber diode for GTO

… High voltage free-wheeling diode

… Fast recovery rectifier applications

1


Forward Conduction

Parameters

PSTSD233N/R

Units

Conditions

IF(AV              Max. average forward current

@ Case temperature

250

A

180° conduction, half sine wave

60

°C

IF(RMX)           Max. RMS forward current

390

A

IFSM               Max. peak, one-cycle forward

non-repetitive surge current

5500

A

t = 10ms

No voltage

reapplied

Initial TJ =TJmax.

5760

A

t = 8.3ms

I2t             Maximum I2t for fusing

150000

A2s

t = 10ms

No voltage

reapplied

140000

A2s

t = 8.3ms

I2t          Maximum I2t for fusing

1500000

KA2√s

I2t for time tx = I2t x tx ;

0.1 tx 10ms, VRRM = 0V

VFM                Maximum forward voltage drop

3.0

V

TJ = 25 oC, IFM = 1200 (arm)

IRRM               Max. DC reverse current

10.0

μA

TJ = 25 oC, per diode at VRRM

Trr

5

μs

Voltage Ratings

Type numbe

Voltage Code

VRRM , max repetitive peak AC rev. voltage TJ = TJ max.

V

VRSM , max non-repetitive peak AC rev. voltage

TJ = TJ max.

V

IRRM max.

@ rated VRRM TJ = TJ max. mA

RRM max. D.C. rev. curr.

@ T= 125°C

(μA)

PSTSD233N/R

20

26

30

35

40

45

50

2000

2600

3000

3500

4000

4500

5000

2100

2700

3100

3600

4100

4600

5100

20

20

20

20

20

20

20

500

500

500

500

500

500

500



Outlines Table

2






Product Categories : Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode

Home > Products > Semiconductor Disc Devices(Capsule Type) > Fast Recovery Diode > High power Fast recovery diodes 4500V
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