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Update December 15, 2020
Schottky diode protection RF sampling ADC input
The design of any high performance ADC, especially the RF sampling ADC, input or front end, is critical to achieve the required system level performance. In many cases, RF sampling ADCs can digitally...
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Update December 15, 2020
Progress in Pressure-induced Superconductivity in Tungsten Diode Tungide of Giant Magnetoresistive Compounds
Tungsten ditungstate (WTe2) is a transitional metal chalcogenide with a layered structure. In its orthorhombic cell, the tungsten chain is distributed along the a-axis of the ruthenium layer in a...
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Update December 14, 2020
A test method for measuring capacitance, inductance, resistance, voltage, diode, and triode using a multimeter
1. Multimeter structure (500 type) The multimeter consists of three main parts: the meter head, the measuring circuit and the changeover switch. (1) Header: It is a high-sensitivity magneto-electric...
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Update December 14, 2020
What is the role of the diode?
The crystal diode is a pn junction formed by a p-type semiconductor and an n-type semiconductor, and a space charge layer is formed at both sides of the interface, and a self-built electric field is...
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Update December 10, 2020
Diode capacitance effect
The diode has a capacitive effect. Its capacitance includes a barrier capacitance CB and a diffusion capacitance CD. 1. Barrier capacitance CB(Cr) The conductive carrier is absent in the PN junction,...
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Update December 10, 2020
Lumics Introduces New LuOcean Series for Laser Diode Semiconductor Lasers
Lumics Corporation announces the LuOcean family of semiconductor lasers for pumped 铥, erbium, neodymium and ytterbium solid-state lasers and fiber lasers. LuOcean series of semiconductor lasers can...
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Update December 09, 2020
Diode Conduction Time Causes Failure of Switching Regulator
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Update December 09, 2020
New 650V Silicon Carbide Schottky Diode
Cree Inc., a market leader in silicon carbide power devices, has announced the latest Z-RecTM 650V junction Schottky Barrier (JBS) diode family to meet the latest data center power system...
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Update December 08, 2020
This new nano-diode is not afraid of being flooded
Whether or not scientists are trying to solve the problem of flexibility after implanting sensors in artificial skin, the electronic circuits must all be tested by our sweat, and silicon chips...
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Update December 08, 2020
Toshiba Launches 1200V Voltage-Resistant SiC Schottky Barrier Diode
On January 27, 2015, Toshiba launched the Schottky barrier diode "TRS20J120C" with a withstand voltage of +1200V and made of SiC (silicon carbide). According to the company, "With the use of SiC...
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