High Frequency DC Power Encapsulation Thyristors

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Transportation:

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Port:

Shanghai

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-T700123503BY

Brand: YZPST

Supply Ability & Additional Information

Productivity: 100

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 1000

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Others

Phase Control Thyristors

YZPST-T700123503BY

Features of the Phase Control Thyristors: center amplifying gate configuration, compression bonded encapsulation, high DV/DT capability and stud type, thread inch or metric. The typical applications of the High Frequency Thyristors are medium power switching and DC power supplies.

Maximum Ratings And Characteristics

Symbol	Parameter		Values	Units	Test Conditions
ON-STATE
I_TAV	Mean on-state current		350	A	Sinewave,180° conduction,Tc=85℃
I_TRMS	RMS value of on-state current		550	A	Nominal value
I_TSM	Peak one cycle surge (non repetitive) current		9.1	KA	10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I²t	I square t		416	KA²s	8.3 msec and 10.0 msec
I_L	Latching current		-	mA	V_D = 24 V; R_L= 12 ohms
I_H	Holding current		-	mA	V_{D =} 24 V; I = 2.5 A
V_TM	Peak on-state voltage		1.4	V	I_TM = 625 A; Duty cycle £ 0.01%
di/dt	Critical rate of rise of on-state current	non-repetitive	800	A/ms	Gate drive 20V, 20Ω, t_r≤1μs, T_j=T_jmax, anode voltage≤80% V_DRM
di/dt	Critical rate of rise of on-state current	repetitive	150	A/ms
BLOCKING
V_DRM V_RRM	Repetitive peak off state voltage Repetitive peak reverse voltage		1200	V
V_DSM V_RSM	Non repetitive peak off state voltage Non repetitive peak reverse voltage		1300	V
I_DRM I_RRM	Repetitive peak off state current Repetitive peak reverse current		30	mA	T_j = 125 ^oC ,V_RRM V_DRMapplied
dV/dt	Critical rate of voltage rise		1000	V/ms	T_J=T_Jmax, linear to 80% rated V_DRM
TRIGGEING
P_G(AV)	Average gate power dissipation		3	W
P_GM	Peak gate power dissipation		16	W
I_GM	Peak gate current		-	A
I_GT	Gate trigger current		150	mA	T_C = 25 ^oC
V_GT	Gate trigger voltage		3.0	V	T_C = 25 ^oC
V_GD	Gate non-trigger voltage		0.15	V	T_j = 125 ^oC
SWITCHING
t_q	Turn-off time		150	ms	I_TM=550A, T_J=T_Jmax, di/dt=40A/μs, V_R=50V, dv/dt=20V/μs, Gate 0V 100Ω, t_p=500μs

t_d

Delay time

Gate current A, di/dt=40A/μs,

V_d=0.67%V_DRM, T_J=25^oC

Q_rr

Reverse recovery charge

Thermal And Mechanical

Symbol	Parameter	Values	Units	Test Conditions
T_j	Operating temperature	-40~125	^oC
T_stg	Storage temperature	-40~150	^oC
R_{th (j-c)}	Thermal resistance - junction to case	0.1	^oC/W	DC operation ,Single sided cooled
R_{th (c-s)}	Thermal resistance - case to sink	0.05	^oC/W	Single sided cooled
P	Mounting force	3.5	Nm
W	Weight	-	g	about