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Security Equipment Thyristor Wholesale Online

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Product Description

Product Attributes
Supply Ability & Additional Information

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Overview

Product Attributes

Model No.: YZPST-N350SH18

Brand: YZPST

Supply Ability & Additional Information

Productivity: 100

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Security Equipment Thyristor Wholesale Online

YZPST-N350SH18

The Wholesale Equipment Thyristor has electrical characteristics and ratings and some applications of the high Power Thyristor for phase control.

The features of the 1800v thyristor are all Diffused Structure. Interdigitated Amplifying Gate Configuration. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability and Pressure Assembled Device.

Blocking - Off State

VRRM (1)	VDRM (1)	VRSM (1)
1800	1800	1900

V_RRM = Repetitive peak reverse voltage

V_DRM = Repetitive peak off state voltage

V_RSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM /}I_DRM

10 mA

60 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Notes:

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.

Conducting - on state

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Max. average value of on-state current	I_T(AV)_M		1042		A	Sinewave,180^o conduction,T_c=55^oC
RMS value of on-state current	I_T₍_RMS_)M		2072		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		- 11.52		kA kA	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		661x10³		A²s	8.3 msec
Latching current	I_L		-		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		-		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		1.75		V	I_TM = 1700 A
Critical rate of rise of on-state current (5, 6)	di/dt		1000		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		500		A/ms	Switching from V_DRM £ 1000 V

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		30		W
Average gate power dissipation	P_G(AV)		4		W
Peak gate current	I_GM		-		A
Gate current required to trigger all units	I_GT		300		mA	V_D = 10 V;I_T=3A;T_j = +25 ^oC
Gate voltage required to trigger all units	V_GT		3.0		V	V_D = 10 V;I_T=3A;T_j = +25 ^oC
Peak negative voltage	V_RG_M		5		V

Dynamic

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_g_d		-	-	ms	V_D=67% V_DRM, I_T=2000A, di/dt=60A/us, I_FG=2A, t_r=0.5us, T_j=25C
Turn-on time	t_gt		-	-
Turn-off time (with V_R = -5 V)	t_q	-	-	-	ms	I_TM=1000A, t_p=1000us, di/dt=60A/us, V_r=50V, V_dr=80%V_DRM, dV_dr/dt=20V/us
Reverse recovery current	I_r_m	-	-	-	A	I_TM=4000A, t_p=2000us, di/dt=60A/us

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_Q_(j-c)		- -		K/kW	Double sided cooled Single sided cooled
Thermal resistamce - case to sink	R_Q_(c-s)		- -		K/kW	Double sided cooled * Single sided cooled *
Thermal resistance - junction to case	R_Q_(j-_s₎		32 64		K/kW	Double sided cooled Single sided cooled
Mounting force	F	10	20	-	kN
Weight	W			-	Kg	about