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2100V Interdigitated Amplifying phase control Thyristor

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Incoterm:

FOB,CFR,CIF

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Transportation:

Ocean,Air

Port:

Shanghai

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Product Description

Product Attributes
Supply Ability & Additional Information

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Overview

Product Attributes

Model No.: YZPST-R2619ZC21J

Brand: YZPST

Type: Intrinsic Semiconductor

Supply Ability & Additional Information

Productivity: 100

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

High Power Thyristor FOR PHASE CONTROL

YZPST-R2619ZC21J

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

VRRM (1)	VDRM (1)	VRSM (1)
2100	2100	2200

       V_RRM = Repetitive peak reverse voltage

       V_DRM = Repetitive peak off state voltage

       V_RSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM /}I_DRM

20 mA

200 mA (3)

Critical rate of voltage rise

dV/dt (4)

200 V/msec

Conducting - on state

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)_M		2619		A	Sinewave,180^o conduction,T_c=55^oC
RMS value of on-state current	I_TRMS		5227		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		33.8 37.2		kA kA	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		5.71x10⁶		A²s	8.3 msec
Latching current	I_L		-		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		1000		mA	V_{D =} 24 V; I =2.5 A
Peak on-state voltage	V_TM		2.3		V	I_TM = 4000 A

Critical rate of rise of on-state

current (5, 6)

di/dt

1500

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

1000

A/ms

Switching from V_DRM £ 1000 V

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		30		W
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		-		A
Gate current required to trigger all units	I_GT		300		mA	V_D = 10 V;I_T=3A;T_j = +25 ^oC
Gate voltage required to trigger all units	V_GT		3		V	V_D = 10 V;I_T=3A;T_j = +25 ^oC
Peak negative voltage	V_RG_M		5		V

Dynamic

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_g_d		-	0.8	ms	V_D=67% V_DRM, I_T=2000A, di/dt=60A/us, I_FG=2A, t_r=0.5us, T_j=25C
Turn-on time	t_gt		-	1.5
Turn-off time (with V_R = -5 V)	t_q		-	50	ms	I_TM=4000A, t_p=2000us, di/dt=60A/us, V_r=100V, V_dr=67%V_DRM, dV_dr/dt=200V/us
Reverse recovery current	I_r_m		-		A	I_TM=4000A, t_p=2000us, di/dt=60A/us

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_Q_(j-c)

-

-

K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

R_Q_(c-s)

-

-

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistamce - junction to sink

R_Q_(c-s)

11

22

K/kW

Double sided cooled *

Single sided cooled *

Mounting force

F

27

47

-

kN

Weight

W

1.7

Kg

about

* Mounting surfaces smooth, flat and greased

Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data

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