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2800V N2055MC280 High power thyristor for phase control applications

$40

10-49
Piece/Pieces
$38

≥50
Piece/Pieces

option:

VDRM:2800V
dV/dt:500 V/μsec
ITRMS:2000A
VRRM:2800V
VRSM:2900V
IT(AV):2000A

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-N2055MC280

Brand: YZPST

Supply Type: Original Manufacturer

Reference Materials: Datasheet, Photo

Place Of Origin: China

Configuration: Array

Current-breakdown: Not Applicable

Current-hold (Ih) (maximum): Not Applicable

Current-off State (maximum): Not Applicable

SCR Number, Diode: Not Applicable

Operating Temperature: -40°c ~ 125°c (Tj)

SCR Type: Not Applicable

Structure: Not Applicable

Voltage-on: Not Applicable

Voltage-gate Trigger (Vgt) (maximum): Not Applicable

Current-output (maximum): Not Applicable

VRRM: 2800V

VDRM: 2800V

VRSM: 2900V

DV/dt: 500 V/μsec

IT(AV): 2000A

ITRMS: 2000A

I2t: 3.3x106 A2s

IL: 800mA

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 100000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 100000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Picture Example:

P/N:YZPST-N2055MC280

High Power Thyristor FOR PHASE CONTROL APPLICATIONS

Features:

. All Diffused Structure

. Center Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

VRRM(1)	V DRM(1)	VRSM(1)
2800	2800	2900

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse

leakage and off state leakage

IRRM / IDRM

10 mA

65 mA (3)

Critical rate of voltage rise

dV/dt (4)

500 V/μsec

Conducting - on state

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	IT(AV)		2000		A	Tc=93oC
RMS value of on-state current	ITRMS		2000		A	Nominal value
Peak one cPSTCle surge	ITSM		41000		A	8.3 msec (60Hz),sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC
(non repetitive) current			36000		A
I square t	I2t		3.3x106		A2s	8.3 msec and 10.0 msec
Latching current	IL		800		mA	VD = 24 V; RL= 12 ohms
Holding current	IH				mA	VD = 24 V; I = 2.5 A
			400
Peak on-state voltage	VTM				V	ITM = 2000 A;
			1.45
Critical rate of rise of on-state current (5)	di/dt				A/μs	Switching from VDRM < 1000 V, non-repetitive
			200

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	PGM		200		W	tp = 40 us
Average gate power dissipation	PG(AV)		5		W
Peak gate current	IGM		10		A
Gate current required to trigger all units	IGT		300		mA	VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC
			150		mA
			125		mA
Gate voltage required to trigger all units	VGT		5		V	VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC
		0.3	3		V
					V
Peak negative voltage	VGRM		5		V

Dynamic

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	td		1.5	0.7	μs	ITM = 50 A; VD = Rated VDRM
						Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 μs; tp = 20 μs
Turn-off time (with VR = -50 V)	t		500	250	μs	ITM = 1000 A; di/dt = 25 A/μs;
						VR > -50 V; Re-applied dV/dt = 20 V/μs linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle > 0.01%
Reverse recovery charge	Qrr				μC	ITM = 1000 A; di/dt = 25 A/μs;
			*			VR > -50 V