Home > Products > Semiconductor Disc Devices(Capsule Type) > Reverse Conducting Thyristor(RCT) > 1300V Fast Switching Reverse-conducting Thyristor RCT

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1300V Fast Switching Reverse-conducting Thyristor RCT

$380

1-49
Piece/Pieces
$190

≥50
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

Shanghai

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Product Description

Product Attributes
Supply Ability & Additional Information

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Overview

Product Attributes

Model No.: YZPST-SHR400R22

Brand: YZPST

VDRM / VRRM: 1300v

IDRM: 35ma

DV/dt: 1000 V/Sec

ITRMS: 630a

IT(AV): 400a

ITSM: 7200a

VTM: 3.0v

Supply Ability & Additional Information

Productivity: 1000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008,ROHS

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

YZPST-SHR400R22 Fast Switching Reverse-conducting Thyristor

RCT FOR INVERTER AND CHOPPER APPLICATIONS

Features:

All Diffused Structure

Interdigitated Amplifying Gate Configuration

Blocking capabilty up to 1300 volts

Guaranteed Maximum Turn-Off Time

High dV/dt Capability

Pressure Assembled Device

Blocking - Off State

Device Type	VDRM	VDSM
SHR400R22	1300	1300

V_DRM = Repetitive peak off state voltage

V_D_S_M = Non-repetitive peak off state voltage

(Non-repetitive<5ms, T_j=0～115℃)

Repetitive peak off state leakage	I_DRM	35 mA
Critical rate of voltage rise	dV/dt	1000 V/msec

Conducting - on state

Parameter	Symbol	Min.	Max.	Typ	Units	Conditions
RMS value of on-state current	I_TRMS		630		A	Nominal value
Average on-state current	I_T(AV)		400		A	Continuous single-phase,half sine wave,180°conduction
Peak one cycle surge on-state current(non repetitive)	I_TSM		7200		A	50Hz, sinusoidal wave- shape, 180^o conduction, T_j = 115 ^oC
I²t Limit Value	I²t		200x10³ (On-Current)		A²s
I²t Limit Value	I²t		31x10³ (Reverse Current)		A²s
Peak on-state voltage	V_TM		3.0		V	I_TM =1250A; T_j = 25 ^oC
Critical rate of rise of on-state current	di/dt		100		A/ms	V_D=1/2V_DRM,I_TM=800A f=60H_ZI_GM=1.5A,di_G/dt=1.0A/us,Tj=115℃
Average reverse current	I_R(AV)		150		A	Continuous single-phase,half sine wave,180°conduction
RMS reverse currrnt	I_R(RMS)		235		A
Peak reverse voltage	V_RM		2.5		V	I_RM=500A, T_j = 25 ^oC
Peak one cycle surge reverse current(non repetitive)	I_R_SM		2500		A	50Hz, sinusoidal wave- shape, 180^o conduction, T_j = 115 ^oC
Critical rate of rise of commutating off-state voltage	(dv/dt)_C	200			A/ms	I_TM=2000A,tw=60us,I_RM=1000A, ,V_DM=1/2V_DR_M,Pulse width 60ms ,Tj=115℃,

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		20		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		4		W
Peak gate current	I_GM		4		A
Gate current required to trigger all units	I_GT		200		mA	V_D = 6 V;R_L = 6 ohms;T_C = 25 ^oC
Holding current	I_H		500			T_j = 25 ^oC ;R_L = 6 ohms
Gate voltage required to trigger all units	V_GT		3.0		V	V_D = 6 V;R_L = 6 ohms;T_C = 25^oC
Peak non- trigger voltage	V_GD		0.15		V	T_j = 115 ^oC;V_D=1/2V_DRM

Product Categories : Semiconductor Disc Devices(Capsule Type) > Reverse Conducting Thyristor(RCT)

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Home > Products > Semiconductor Disc Devices(Capsule Type) > Reverse Conducting Thyristor(RCT) > 1300V Fast Switching Reverse-conducting Thyristor RCT

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