Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A
  • YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A
  • YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A
  • YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A
  • YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A

YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A

  • $0.135
    100-999
    Piece/Pieces
  • $0.09
    ≥1000
    Piece/Pieces
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
1 Piece/Pieces
Transportation:
Ocean,Air
Port:
Shanghai
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BT151

BrandYZPST

ApplicationNot Applicable

Supply TypeOriginal Manufacturer, Agency

Reference MaterialsPhoto, Datasheet

Package TypeSurface Mount

Installation MethodThrough Hole, Not Applicable

FET FunctionNot Applicable

ConfigurationNot Applicable

Supply Ability & Additional Information

PackagingFor more detailed product information and transaction information, please contact our email address : info@yzpst.com

Productivity100000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
For more detailed product information and transaction information, please contact our email address : info@yzpst.com

SCRS

YZPST-BT151

YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A



●Main Feature (Tjj=2255℃)

Symbol

Value

Unit

IT(AV)

7.5

A

VDRM / VRRM

 600

V

IGT

1 to 20

mA


●Absolute ratings (Limiting Values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (180°conduction angle)

12

A

IT(AV)

AV on-state current (180°conduction angle)

7.5

A

ITSM

Non repetitive surge peak on-state

Current (tp=10ms)

100

A

I2t

 (tp=10ms)

50

A2S

IGM

Peak gate current(tp=20us)

2

A

PGM

Peak gate power

5

W

PG(AV)

Average gate power

0.5

W

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+125


●Thermai Resistances

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

1.3

K/W

Rth (j-a)

Junction to ambient

60

K/W

●Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol

Test Conditions

Value

Unit

Min

Type

Max

IGT

VD=6V, RL=100Ω

1

5

20

uA

VGT

VD=12V, RL=100Ω

-----

0.7

0.8

V

VGD

VD=VDRM, RL=3.3KΩ Tj=110

0.2

-----

-----

V

IH

IT=100mA  Gate Open

-----

9

20

mA

dV/dt

VD=67%VDRM, GateOpen, Tj=125

50

125

-----

v/μs

VTM

IT=16A,tp=380μs

-----

-----

1.7

V

IDRM

IRRM

VD=VDRM

VR=VRRM

Tj=25

-----

-----

20

uA

Tj=110

-----

-----

300

uA

●Measure of  package (TO-220E)

YZPST-BT151 Silicon Controlled Rectifierr SCR 7.5A












Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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