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Home > Products > Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR) > High dv/dt rate TO-92 0.8A SCR
High dv/dt rate TO-92 0.8A SCR
  • High dv/dt rate TO-92 0.8A SCR
  • High dv/dt rate TO-92 0.8A SCR
  • High dv/dt rate TO-92 0.8A SCR
  • High dv/dt rate TO-92 0.8A SCR
  • High dv/dt rate TO-92 0.8A SCR

High dv/dt rate TO-92 0.8A SCR

  • $39
    200-1999
    Others
  • $32
    ≥2000
    Others
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Overview
Product Attributes

Model No.: YZPST-BT169 10-30UA

Brand: YZPST

Place Of Origin: China

LT(RMS): 0.8A

VTM: <1.5V

Tstg: -40~150℃

Tj: -40~110℃

LTSM: 10A

L2t: 0.5A2s

Dl/dt: 50A/μs

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 100000000

Transportation: Ocean,Land,Express,Others

Place of Origin: CHINA

Supply Ability: 100000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery
Selling Units:
1000 pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

YZPST-BT169 SCR


DESCRIPTION:

The B T 1 6 9 ScR series provide high dv/dt rate

with strong resistance to electromagnetic interface.

They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc.

YZPST-BT169 10-30UA TO-92


MAIN FEATURES:

symboI

vaIue

unit

lT(RMS)

0.8

A

VDRM/VRRM

400/600/800

V

VTM

<1.5

V

ABSOLUTE MAXIMUM RATINGS:

Parameter

SymboI

vaIue

Unit

Storage junction temperature range

Tstg

-40~150

℃

operating junction temperature range

Tj

-40~110

℃

Repetitive peak off-state voltage (Tj=25℃)

VDRM

400/600/800

V

Repetitive peak reverse voltage (Tj=25℃)

VRRM

400/600/800

V

RMS on-state current (Tc=80℃)

lT(RMS)

0.8

A

Non repetitive surge peak on-state current

(full cycle, F=50Hz)

lTSM

10

A

l2t value for fusing (tp=10ms)

l2t

0.5

A2s

critical rate of rise of on-state current (lG=2xlGT)

dl/dt

50

A/μs

Peak gate current

lGM

0.2

A

Average gate power dissipation

PG(AV)

0.1

W

Peak gate power

PGM

0.5

W

ELECTRICAL CHARACTERISTICS (Tj=25K  Unless otherwise specified)

SymboI vaIue
Test Condition MlN TYPE MAX unit
lGT - 20 200 μA
VGT VD=12V, RL=33Ω - 0.5 1 V
VD=VDRM Tj=110K
VGD RL=3.3KΩ 0.2 - - V
lH lT=50mA - - 2 mA
lL lG=1.2lGT - - 3 mA
VD=0.66XVDRM   Tj=110K
dV/dt G  RGK=1KΩ 20 - - V/μs

STATIC CHARACTERISTICS

SymboI Test Condition vaIue unit
VTM lTM=2A   tp=380μs Tj=25℃ MAX 1.5 V
lDRM VDRM= VRRM Tj=25℃ 5 μA
lRRM RGK=1KΩ Tj=110℃ MAX 100 μA

PACKAGE MECHANICAL DATA

YZPST-BT169 TO-92


Product Categories : Semiconductor Plastic Package > Silicon Controlled Rectifier (SCR)

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