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NPN silicon power transistors 13005D

Name: NPN silicon power transistors YZPST-13005D
Uploaded: 2022-12-20T15:32:33+08:00
Description: NPN silicon power transistors 13005D

$0.12

2000-9999
Piece/Pieces
$0.08

≥10000
Piece/Pieces

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-13005D

Brand: YZPST

VCBO: 700V

VCEO: 400V

VEBO: 9V

IC: 3A

Icm: 6A

PTOT: 75W

Tj: 150℃

Tstg: -55—150℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 10000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 100000

Certificate: ISO9001-2015,ROHS

HS Code: 85413000

Port: SHANGHAI

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

NPN SILICON POWER TRANSISTORS 13005D
●DESRCRIPTION:
The 13005D is an NPN transistor used in electronic ballasts and electronic energy saving -lamps. It has the characteristics of low switching loss, high reliability, good high temperature characteristics, suitable switching speed, high breakdown voltage and low reverse leakage.

Silicon Power Transistors

●ABSOLUTE MAX I MUM RATINGS

Symbol	Parameter		Value	Unit
VCBO	Collector-Base Voltage		700	V
VCEO	Collector-Emitter Voltage		400	V
VEBO	Emitter-Base Voltage		9	V
I_C	Continuous Collector Current		3	A
Icm	Collector Pulse Current（Tp＜5ms）		6	A
PTOT	Total dissipation at Tcase=25 ℃	TO-126SD	50	W
PTOT	Total dissipation at Tcase=25 ℃	TO-220	75	W
T_j	Junction Temperature		150	℃
T_stg	Storage Temperature Range		-55—150	℃

●ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol	Parameter	Test Condition	Value			Unit
Symbol	Parameter	Test Condition	Min	Type	Max	Unit
ICBO	Collector Cutoff Current	V_CB= 700 V，IE=0			0.1	mA
ICEO	Base Cutoff Current	V_CE= 400 V，Ic=0			0.1	mA
IEBO	Emitter Cutoff Current	V_EB= 9 V，I_C=0			0.1	mA
VCBO	Collector-Base Breakdown Voltage	I_C= 0.1mA	700			V
VCEO	Collector-Emitter Breakdown Voltage	I_C= 0.1mA	400			V
VEBO	Emitter-Base Breakdown Voltage	I_B= 0.1mA	9			V
hFE	DC Current Gain	I_C= 0.5A,V_CE= 5V	15		35
a VCE sat	Collector-Base Breakdown Voltage	I_C= 2A,I_B= 0.5A			1	V
a VBE sat	Base-Emitter Saturation Voltage	I_C= 2A,I_B= 0.5A			1.5	V
ts	Storage Time	UI9600，Ic=0.5A	2		7	us
f_T	Transition Frequency	VCE=10V，IC=0.2A F=1MHz	5			MHz
a：Pulse Test，tp ≤300us，δ≤2%