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high reliability PNP Type Transistor 2SA940

$0.12

2000-9999
Piece/Pieces
$0.08

≥10000
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-2SA940

Brand: YZPST

VCBO: -150V

VCEO: -150V

VEBO: -5V

IC: -1.5A

PTOT: 25W

Tj: 150℃

Tstg: -55—150℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 10000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 100000

Certificate: ISO9001-2015,ROHS

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

PNP Type Transistor 2SA940

DESRCRIPTION:
The 2SA940 is a PNP type transistor, used as a power switch tube for electronic ballasts and electronic energy-saving lamps. It has the characteristics of low switching loss, high reliability, good high temperature characteristics, suitable switching speed, high breakdown voltage, low reverse leakage, etc.
high reliability PNP Type Transistor 2SA940

ABSOLUTE MAX I MUM RATINGS

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-150	V
VCEO	Collector-Emitter Voltage	-150	V
VEBO	Emitter-Base Voltage	-5	V
IC	Continuous Collector Current	-1.5	A
PTOT	Total dissipation at Tcase=25 ℃	25	W
T_j	Junction Temperature	150	℃
T_stg	Stora-1.5ge Temperature Range	-55〜150	℃

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol	Parameter	Test Condition	Value			Unit
Symbol	Parameter	Test Condition	Min	Type	Max	Unit
V(BR)CBO	Collector-Base Breakdown Voltage	I_C=-1mA	-150			V
V(BR)CEO	Collector-Emitter Breakdown Voltage	I_C=-1mA	-150			V
V(BR)EBO	Emitter-Base Breakdown Voltage	I_E=-1mA	- 5			V
ICBO	Collector Cutoff Current	V_CB=-150V, I_E=0			-5	μA
ICEO	Collector Cutoff Current	V_CE=-150V, I_C=0			-5	μA
IEBO	Emitter Cutoff Current	V_EB=-5V, I_C=0			-5	μA
hFE	DC Current Gain	V_CE=-10V, I_C=-0.5A	40		140
VCE(sat)	Collector-Base Breakdown Voltage	I_C=-0.5A, I_B=-50mA			-0.85	V
VBE(sat)	Base-Emitter Saturation Voltage	I_C=-0.5A, I_B=-50mA			-1.5	V
a: tp≤300μs,δ≤2%