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NPN silicon power transistors MJE2955T complementary to MJE3055T

Name: YZPST-MJE2955T NPN silicon power transistors MJE29
Uploaded: 2022-12-20T21:32:08+08:00
Description: NPN silicon power transistors MJE2955T complementary to MJE3055T

$0.12

2000-9999
Piece/Pieces
$0.08

≥10000
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

SHANGHAI

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-MJE2955T

Brand: YZPST

VCBO: -70V

VCEO: -60V

VEBO: -5V

IC: -10A

PTOT: 75W

Tj: 150℃

Tstg: -55-150℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 10000

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 100000

Certificate: ISO9001-2015,ROHS

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

PNP SILICON POWER TRANSISTORS MJE2955T

DESRCRIPTION:
The MJE2955T is an PNP Transistor, which is complementary to MJE3055T and is used in audio power amplification and power conversion circuits.

Package form: TO-220

TO220 Silicon Power Transistors MJE2955T

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-70	V
VCEO	Collector-Emitter Voltage	-60	V
VEBO	Emitter-Base Voltage	-5	V
IC	Continuous Collector Current	-10	A
PTOT	Total dissipation at Tcase=25 ℃	75	W
T_j	Junction Temperature	150	℃
T_stg	Storage Temperature Range	-55-150	℃

● ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol	Parameter	Test Condition	Value			Unit
Symbol	Parameter	Test Condition	Min	Type	Max	Unit
VCBO	Collector-Base Breakdown Voltage	I_C= -10mA	-70			V
VCEO	Collector-Emitter Breakdown Voltage	I_C= -200mA	-60			V
VEBO	Emitter-Base Breakdown Voltage	I_E= -10mA	- 5			V
ICBO	Collector Cutoff Current	V_CB= -70V			1	mA
IEBO	Emitter Cutoff Current	V_EB= -5V			5	mA
hFE	DC Current Gain	I_C= -4A,V_CE= -4V	20		100
VCE(sat)	Collector-Base Breakdown Voltage	I_C= -4A,I_B= -0.4A			-1.1	V
VBE(sat)	Base-Emitter Saturation Voltage	I_C= -4A,I_B= -4A			-1.8	V
f_T	Transition Frequency	VCE=10V, IC=0.5A， f=1MHZ	2			MHZ
a：Pulse Test，tp ≤300us，δ≤2%