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  • Silicon PNP Darlington Power Transistor
  • Silicon PNP Darlington Power Transistor
  • Silicon PNP Darlington Power Transistor
  • Silicon PNP Darlington Power Transistor
  • Silicon PNP Darlington Power Transistor

Silicon PNP Darlington Power Transistor

  • $0.72
    100-499
    Piece/Pieces
  • $0.55
    ≥500
    Piece/Pieces
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
1 Piece/Pieces
Transportation:
Ocean,Air
Port:
Shanghai
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  • Product Description
Overview
Product Attributes

Model No.YZPST-FW26025A

BrandYZPST

TypeIntrinsic Semiconductor

ApplicationRadio

Batch Number2010+

VCBO-100V

VCEO-100V

VEBO-5V

IC-20A

Icm-40A

IB-0.5A

PC160W

TJ200℃

Tstg-65~200℃

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity100000

TransportationOcean,Air

Place of OriginChina

Supply Ability1000000

CertificateISO9001-2015,ROHS

HS Code85413000

PortShanghai

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Silicon PNP Darlington Power Transistor

YZPST-FW26025A

Silicon PNP Darlington Power Transistor

DESCRIPTION

·High DC Current Gain-

: hFE = 5000(Min)@ IC= -2A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -100V(Min)

·Minimum Lot-to-Lot variations for robust device performance and reliable operation.

APPLICATIONS

·Designed for linear and switching industrial equipment

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

 

PARAMETER

 

VALUE

 

UNIT

 

VCBO

 

Collector-Base Voltage

 

-100

 

V

 

VCEO

 

Collector-Emitter Voltage

 

-100

 

V

 

VEBO

 

Emitter-Base Voltage

 

-5

 

V

 

IC

 

Collector Current-Continuous

 

-20

 

A

 

ICM

 

Collector Current-Peak

 

-40

 

A

 

IB

 

Base Current- Continuous

 

-0.5

 

A

 

PC

Collector Power Dissipation

@TC=25

 

160

 

W

 

Tj

 

Junction Temperature

 

200

 

Tstg

 

Storage Temperature Range

 

-65~200

THERMAL CHARACTERISTICS

SYMBOL

 

PARAMETER

 

MAX

 

UNIT

 

Rth j-c

 

Thermal Resistance, Junction to Case

 

1.09

/W

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

 

SYMBOL

 

PARAMETER

 

CONDITIONS

 

MIN

 

TYP.

 

MAX

 

UNIT

 

VCEO(SUS)*

 

Collector-Emitter Sustaining Voltage

 

IC= -100mA, IB= 0

 

-100

 

 

 

V

 

VCE(sat)-1*

 

Collector-Emitter Saturation Voltage

 

IC= -10A ,IB= -40mA

 

 

 

-2.0

 

V

 

VCE(sat)-2*

 

Collector-Emitter Saturation Voltage

 

IC= -20A ,IB= -200mA

 

 

 

-3.0

 

V

 

VBE(sat)*

 

Base-Emitter Saturation Voltage

 

IC= -20A ,IB= -200mA

 

 

 

-4

 

V

 

V BE(on)*

 

Base-Emitter On Voltage

 

IC= -10A ; VCE= -3V

 

 

 

-2.8

 

V

 

ICEO

 

Collector Cutoff current

 

VCE= -50V, IB= 0

 

 

 

-1

 

mA

 

ICEV

 

Collector Cutoff current(VBE=-1.5V)

VCE= -100V, IB= 0

 

 

-0.5

 

mA

VCE= -100V, IB= 0,Tc=150

-5

 

IEBO

 

Emitter Cutoff Current

 

VEB= -5V; IC= 0

 

 

 

-2

 

mA

 

hFE-1*

 

DC Current Gain

 

IC= -2A ; VCE= -3V

 

5000

 

 

 

 

hFE-2*

 

DC Current Gain

 

IC= -10A ; VCE= -3V

 

750

 

 

18000

 

 

hFE-3*

 

DC Current Gain

 

IC= -30A ; VCE= -3V

 

200

 

 


*:Pulse test:Pulse width=300us,duty cycle≤2%

Silicon PNP Darlington Power Transistor




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