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Home > Products > Semiconductor Plastic Package > Silicon Transistor > SS8550 TO-92 Plastic-Encapsulate Transistors NPN
SS8550 TO-92 Plastic-Encapsulate Transistors NPN
  • SS8550 TO-92 Plastic-Encapsulate Transistors NPN
  • SS8550 TO-92 Plastic-Encapsulate Transistors NPN
  • SS8550 TO-92 Plastic-Encapsulate Transistors NPN
  • SS8550 TO-92 Plastic-Encapsulate Transistors NPN

SS8550 TO-92 Plastic-Encapsulate Transistors NPN

  • $9.5
    50-499
    Others
  • $8
    ≥500
    Others
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Overview
Product Attributes

Model No.: YZPST-SS8550

Brand: YZPST

Place Of Origin: China

Package: TO-92

VCBO: -40V

VCEO: -25V

VEBO: -5V

IC: -1.5A

PD: 1000mW

R θ JA: 125℃ / W

TJ,Tstg: -55 -＋150℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 1000000

Transportation: Ocean,Land

Supply Ability: 1000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery
Selling Units:
K pcs
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
TO-92 Plastic-Encapsulate Transistors
YZPST-SS8550 TRANSISTOR (PNP)
FEATUREs
 Power dissipation

              PC :1W  (Ta=25 ℃)

TO-92


ORDERINGINFORMATION

PartNumber

Package

PackingMethod

PackQuantity

SS8550

TO-92

Bulk

1000pcs/Bag

SS8550-TA

T0-92

Tape

2000pcs/Box

MAX1MUMRAT1NGs(Ta=25℃ unlessotherwise noted)

symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-25

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

- 1.5

A

PD

Collector Power Dissipation

1000

mW

R θ JA

Thermal Resistance f rom Junction to Ambient

125

℃ / W

TJ,Tstg

Operation Junction  and Storage Temperature Range

-55 -＋150

℃

Ta=25 ℃ unless otherwise specified

Parameter symbol Test Min Typ Max Unit
 
 
 conditions
Collector.base V(BR)CBO IC=- 100uA, IE=0 -40 V
breakdown
voltage
Collector.emitter V(BR)CEO IC=-0. 1mA, IB=0 -25 V
breakdown voltage
Emitter.base V(BR)EBO IE=- 100uA, IC=0 -5 V
breakdown
voltage
Collector ICBO VCB=-40V, IE=0 -0. 1 uA
cut.off
current
Emitter ICEO VCE=-20V, IE=0 -0. 1 uA
cut.off
current
Emitter IEBO VEB=-5V, IC=0 -0. 1 uA
cut.off
current
DC hFE(1) VCE=- 1V, IC=- 100mA 85 400
current
gain hFE(2) VCE=- 1V, IC=-800mA 40
Collector.emitter VCE(sat) IC=-800mA, IB=-80mA -0.5 V
saturation
voltage
Base.emitter VBE(sat) IC=-800mA, IB=-80mA -1.2 V
saturation voltage
Base.emitter VBE(on) VCE=- 1V, IC=- 10mA -1 V
voltage
out Cob VCB=- 10V, IE=0mA,f=1MHZ 20 pF
capacitance
Transition fT VCE=- 10V, IC=-50mA,f=30MHZ 100 MHz
frequency

To.92 PackageoutlineDimensions

Outline Dimensions



Product Categories : Semiconductor Plastic Package > Silicon Transistor

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