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Fast switching and short tail current 1200V 900A IGBT Module

$165

5-49
Piece/Pieces
$135

≥50
Piece/Pieces

option:

VGES:±20V
ICM:1200A
IC TC=25℃:880A
IC TC=95℃:900A
Ptot:3125W
VCES:1200V

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-G900WB120B6TC

Brand: YZPST

Place Of Origin: China

VCES: 1200V

VGES: ±20V

IC TC=25℃: 880A

IC TC=95℃: 900A

ICM: 1200A

Ptot: 3125W

IF(AV): 900A

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000

Transportation: Ocean,Land

Supply Ability: 10000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Picture Example:

1200V 900A IGBT Module

P/N: YZPST-G900WB120B6TC

PRODUCT FEATURES

IGBT CHIP(Trench+FS)

Low saturation voltage and positive temperature coefficient

Fast switching and short tail current

Free wheeling diodes with fast and soft reverse recovery

Temperature sense included

APPLICATIONS

AC motor control

Motion/servo control

Inverter and power supplies

Photovoltaic/Fuel cell

YZPST-G900WB120B6TC IGBT Module

IGBT-ABSOLUTE MAXIMUM RATINGS(TC =25°C unless otherwise specified)

Symbol	Parameter/Test Conditions		Values	Unit
VCES	Collector Emitter Voltage	TJ=25℃	1200	V
VGES	Gate Emitter Voltage		±20	V
IC	DC Collector Current	TC=25℃, TJmax =175℃	880
IC	DC Collector Current	TC=95℃, TJmax =175℃	900	A
ICM	Repetitive Peak Collector Current	tp=1ms	1200
Ptot	Power Dissipation Per IGBT	TC=25℃, TJmax =175℃	3125	W

Diode-ABSOLUTE MAXIMUM RATINGS ( TC =25°C unless otherwise specified)

Symbol	Parameter/Test Conditions		Values	Unit
VRRM	Repetitive Reverse Voltage	TJ=25℃	1200	V
IF(AV)	Average Forward Current		900	A
IFRM	Repetitive Peak Forward Current	tp=1ms	1200	A
I2t		TJ =150℃, t=10ms, VR=0V	45	kA2s

IGBT-inverter

ELECTRICAL CHARACTERISTICS (TC =25°C unless otherwise specified)

Symbol	Parameter/Test Conditions			Min.	Typ.	Max.	Unit
VGE(th)	Gate Emitter Threshold Voltage	VCE=VGE , IC=24mA		5	5.8	6.5
	Collector Emitter	IC=900A, VGE=15V, TJ=25℃			1.9	2.3
VCE(sat)	Saturation Voltage	IC=900A, VGE=15V, TJ=125℃			2.2		V
		IC=900A, VGE=15V, TJ=150℃			2.25
ICES	Collector Leakage Current	VCE=1200V, VGE=0V, TJ=25℃				1	mA
ICES	Collector Leakage Current	VCE=1200V, VGE=0V, TJ=150℃				10	mA
IGES	Gate Leakage Current	VCE=0V,VGE=±20V, TJ=25℃		-400		400	nA
RGint	Integrated Gate Resistor				0.7		Ω
Qg	Gate Charge	VCE=900V, IC=900A , VGE=15V			3.1		µC
Cies	Input Capacitance	VCE=25V, VGE=0V, f =1MHz			43.2		nF
Cres	Reverse Transfer Capacitance	VCE=25V, VGE=0V, f =1MHz			2.07		nF
td(on)	Turn on Delay Time	VCC=600V,IC=900A RG =1.5Ω ,	TJ=25℃		100		ns
td(on)	Turn on Delay Time	VGE=±15V,	TJ=150℃		110		ns
tr	Rise Time	Inductive Load	TJ=25℃		85		ns
tr	Rise Time		TJ=150℃		95		ns
td(off)	Turn off Delay Time	VCC=600V,IC=900A RG =1.5Ω ,	TJ=25℃		530		ns
td(off)	Turn off Delay Time	VGE=±15V,	TJ=150℃		580		ns
tf	Fall Time	Inductive Load	TJ=25℃		65		ns
tf	Fall Time		TJ=150℃		215		ns
			TJ=25℃		55		mJ
Eon	Turn on Energy		TJ=125℃		85		mJ
		VCC=600V,IC=900A RG =1.5Ω ,	TJ=150℃		95		mJ
		VGE=±15V,	TJ=25℃		45		mJ
Eoff	Turn off Energy	Inductive Load	TJ=125℃		58		mJ
			TJ=150℃		63		mJ
ISC	Short Circuit Current	tpsc≤10µs , VGE=15V			2200		A
ISC	Short Circuit Current	TJ=150℃,VCC=800V			2200		A
RthJC	Junction to Case Thermal Resistance （Per IGBT）					0.048	K /W