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UPS 1700V IGBT Power Module

$195

2-99
Piece/Pieces
$135

≥100
Piece/Pieces

Payment Type:

L/C,T/T,Paypal

Incoterm:

FOB,CFR,CIF

Min. Order:

1 Piece/Pieces

Transportation:

Ocean,Air

Port:

Shanghai

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-450B170E53

VCES: 1700V

IC: 450V

ICRM: 900A

VGES: ±20V

Ptot: 3260W

ICES: 1.0mA

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity: 10000

Transportation: Ocean,Air

Supply Ability: 10000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

IGBT Power Module YZPST-450B170E53

Applications
Inverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)

Features

Low Vce(sat) with SPT+ IGBT technology

Vce(sat) with positive temperature coefficient

Including fast & soft recovery anti-parallel FWD

High short circuit capability(10us)

Low inductance module structure

Maximum junction temperature 175C

Absolute Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Collector-Emitter Voltage	VCES	VGE=0V, IC =1mA, Tvj=25C	1700	V
Continuous Collector Current	IC	Tc=100C	450	A
Peak Collector Current	ICRM	tp=1ms	900	A
Gate-Emitter Voltage	VGES	Tvj=25C	±20	V
Total Power Dissipation (IGBT-inverter)	Ptot	Tc=25C Tvjmax=175C	3260	W

IGBT Characteristics

Parameter			Value			Unit
Parameter	Symbol	Conditions	Min.	Typ.	Max.
Gate-emitter Threshold Voltage	VGE(th)	VGE=VCE, IC =24mA,Tvj=25C	5.4	6.2	7.4	V
Collector-Emitter Cut-off Current	ICES	VCE=1700V,VGE=0V, Tvj=25C			1	mA
		Ic=450A,VGE=15V, Tvj=25C		2.4	2.75	V
		Ic=450A,VGE=15V, Tvj=25C		2.4	2.75	V
Collector-Emitter	VCE(sat)	Ic=450A,VGE=15V, Tvj=125C		2.8		V
Saturation Voltage		Ic=450A,VGE=15V, Tvj=150C		2.9		V
Gate Charge	G			2.7		uC
Input Capacitance	Cies			30		nF
Input Capacitance	Cies			30		nF
Output Capacitance	Coes	VCE=25V,VGE =0V,		1.65		nF
Reverse Transfer Capacitance	Cres	f=1MHz, Tvj=25C		1.08		nF
Gate-Emitter leakage current	IGES	VCE=0 V, VGE=20 V, Tvj = 25C			400	nA
Turn-on Delay Time	td(on)			510		ns


Rise Time	tr	IC =450 A		180		ns
Turn-off Delay Time	td(off)	VCE = 900 V		620		ns
Fall Time	tf	VGE = ±15V		185		ns
Energy Dissipation During Turn-on Time	Eon	RG = 3.3Ω		126		mJ
Energy Dissipation During Turn-off Time	Eoff	Tvj=25C		89		mJ
Turn-on Delay Time	td(on)			512		ns


Rise Time	tr	IC =450 A		190		ns
Turn-off Delay Time	td(off)	VCE = 900 V		712		ns
Fall Time	tf	VGE = ±15V		350		ns
Energy Dissipation During Turn-on Time	Eon	RG = 3.3Ω		162		mJ
Energy Dissipation During Turn-off Time	Eoff	Tvj=125C		125		mJ

Turn-on Delay Time

td(on)

IC =450 A

VCE = 900 V

VGE = ±15V

RG = 3.3Ω

Tvj=150C

515

ns

Rise Time

tr

200

ns

Turn-off Delay Time

td(off)

730

ns

Fall Time

tf

430

ns

Energy Dissipation During Turn-on Time

Eon

175

mJ

Energy Dissipation During Turn-off Time

Eoff

130

mJ

SC Data

Isc

Tp≤10us,VGE=15V,

Tvj=150C,Vcc=1000V,

VCEM≤1700V

1450

A

Diode Characteristics

Parameter Value Unit

Symbol Conditions Min. Typ. Max.

Diode DC Forward Current IF Tc=100C 450 A

Diode Peak Forward Current IFRM tp=1ms 900 A

IF=450A,Tvj=25C 1.85 V

IF=450A,Tvj=125C 1.92 V

Forward Voltage VF IF=450A,Tvj=150C 1.9 V

Recovered Charge Qrr IF =450 A 110 uC

VR=900V

Peak Reverse Recovery Current Irr -diF/dt =2500A/us 348 A

Reverse Recovery Energy Erec Tvj=25C 64.2 mJ

Recovered Charge Qrr IF =450 A 160 uC

VR=900V

Peak Reverse Recovery Current Irr -diF/dt =2500A/us 394 A

Reverse Recovery Energy Erec Tvj=125C 94.4 mJ

Recovered Charge Qrr IF =450 A 176 uC

VR=900V

Peak Reverse Recovery Current Irr -diF/dt =2500A/us 410 A

Reverse Recovery Energy Erec Tvj=150C 103.2 mJ

Circuit Diagram

Package Dimensions

Product Categories : Semiconductor Module Devices > IGBT Module

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Turn-on Delay Time	td(on)	IC =450 A VCE = 900 V VGE = ±15V RG = 3.3Ω Tvj=150C	515	ns
Rise Time	tr		200	ns
Turn-off Delay Time	td(off)		730	ns
Fall Time	tf		430	ns
Energy Dissipation During Turn-on Time	Eon		175	mJ
Energy Dissipation During Turn-off Time	Eoff		130	mJ
SC Data	Isc	Tp≤10us,VGE=15V, Tvj=150C,Vcc=1000V, VCEM≤1700V	1450	A