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High short circuit capability 650V IGBT Power Module 200A

$33

10-99
Piece/Pieces
$25

≥100
Piece/Pieces

option:

IC:200A
VCES:650V
ICRM:400A
VGES:±20V
Ptot:695W

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-SKM195GB066D

Brand: YZPST

Place Of Origin: China

VCES: 650V

IC: 200A

ICRM: 400A

VGES: ±20V

Ptot: 695W

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000

Transportation: Ocean,Land

Supply Ability: 10000

Port: SHANGHAI

Payment Type: L/C,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Picture Example:

IGBT Power Module Type:YZPST-SKM195GB066D

Applications

Inverter for motor drive

AC and DC servo drive amplifier

UPS (Uninterruptible Power Supplies)

Soft switching welding machine

Features

Low Vce(sat) with Trench Field-stop technology

Vce(sat) with positive temperature coefficient

Including fast & soft recovery anti-parallel FWD

High short circuit capability(10us)

Low inductance module structure

Maximum junction temperature 175℃

Absolute Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Collector-Emitter Voltage	VCES	VGE=0V, IC =1mA, Tvj=25℃	650	V
Continuous Collector Current	IC	Tc=100℃	200	A
Peak Collector Current	ICRM	tp=1ms	400	A
Gate-Emitter Voltage	VGES	Tvj=25℃	±20	V
Total Power Dissipation (IGBT-inverter)	Ptot	Tc=25℃ Tvjmax=175℃	695	W

IGBT Characteristics

Parameter			Value			Unit
Parameter	Symbol	Conditions	Min.	Typ.	Max.
Gate-Emitter Threshold Voltage	VGE(th)	VGE=VCE, IC =3.2mA,Tvj=25℃	5.1	5.8	6.3	V
		VCE=650V,VGE=0V, Tvj=25℃			1	mA
Collector-Emitter Cut-off Current	ICES	VCE=650V,VGE=0V, Tvj=125℃			5	mA
Collector-Emitter		Ic=200A,VGE=15V, Tvj=25℃		1.45	1.95	V
Saturation Voltage	VCE(sat)	Ic=200A,VGE=15V, Tvj=125℃		1.65		V
Input Capacitance	Cies	VCE=25V,VGE =0V,		12.3		nF
Reverse Transfer Capacitance	Cres	f=1MHz, Tvj=25℃		0.37		nF
Internal Gate Resistance	Rgint			1		Ω
Turn-on Delay Time	td(on)			48		Ns
Turn-on Delay Time	td(on)			48		Ns
Rise Time	tr	IC =200 A		48		Ns
Turn-off Delay Ttime	td(off)	VCE =300 V		348		Ns
Fall Time	tf	VGE = ±15V		58		Ns
Energy Dissipation During Turn-on Time	Eon	RG = 3.6Ω		2.32		mJ
Energy Dissipation During Turn-off Time	Eoff	Tvj=25℃		5.85		mJ
Turn-on Delay Time	td(on)			48		Ns


Rise Time	tr	IC =200 A		48		Ns
Turn-off Delay Time	td(off)	VCE = 300V		364		Ns
Fall Time	tf	VGE = ±15V		102		Ns
Energy Dissipation During Turn-on Time	Eon	RG =3.6Ω		3.08		mJ
Energy Dissipation During Turn-off Time	Eoff	Tvj=125℃		7.92		mJ
SC Data	Isc	Tp≤10us,VGE=15V,Tvj=150℃ , Vcc=300V,VCEM≤650V		1000		A

Diode Characteristics

Parameter			Value			Unit
Parameter	Symbol	Conditions	Min.	Typ.	Max.
Diode DC Forward Current	IF	Tc=100℃		200		A
Diode Peak Forward Current	IFRM			400		A
		IF=200A,Tvj=25℃		1.55	1.95	V
Forward Voltage	VF	IF=200A,Tvj=125℃		1.5		V

Parameter			Value			Unit
Parameter	Symbol	Conditions	Min.	Typ.	Max.
Recovered Charge	Qrr			8.05		uC
		IF =200 A
		VR=300V
Peak Reverse Recovery Current	Irr	-diF/dt =4200A/us		148		A
Reverse Recovery Energy	Erec	Tvj=25℃		1.94		mJ
Recovered Charge	Qrr			16.9		uC
		IF =200 A
		VR=300V
Peak Reverse Recovery Current	Irr	-diF/dt =4200A/us		186		A
Reverse Recovery Energy	Erec	Tvj=125℃		3.75		mJ

Module CharacteristicsTC=25°C unless otherwise specified

Parameter Symbol Conditions Value Unit

Min. Typ. Max.

Isolation voltage Visol t=1min,f=50Hz 2500 V

Maximum Junction Temperature Tjmax 150 ℃

Operating Junction Temperature Tvj op -40 125 ℃

Storage Temperature Tstg -40 125 ℃

per IGBT-inverter 0.19 K/W

Junction-to Case R θjc per Diode-inverter 0.31 K/W

Case to Sink R θcs Conductive grease applied 0.085 K/W

Module ElectrodesTorque Mt Recommended(M5) 2.5 5 N · m

Module-to-SinkTorque Ms Recommended(M6) 3 5 N · m

Weight of Module G 150 g

Package Dimensions

Product Categories : Semiconductor Module Devices > IGBT Module

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