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Types of Center Amplifying Fast Switching Thyristor DCR1059

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Product Description

Product Attributes
Supply Ability & Additional Information

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Overview

Product Attributes

Model No.: YZPST-DCR1059

Brand: YZPST

Supply Ability & Additional Information

Productivity: 500

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 200

Certificate: ISO9000

HS Code: 85413000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

High Power Thyristor PHASE CONTROL

YZPST-DCR1059

All ratings are specified for Tj=25 oC unless otherwise stated.

(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addi-

tion to that obtained from a snubber circuit, comprising a 0.2 F capacitor and 20 ohms resistance in parallel with the thristor under test.

Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2100 volts

. Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device

HIGH POWER THYRISTOR PHASE CONTROL

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		1080		A	Sinewave,180^o conduction,T_c=80^oC
RMS value of on-state current	I_TRMS		1700		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		- 18000		A A	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		1.6x10⁶		A²s	8.3 msec and 10.0 msec
Latching current	I_L		-		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		-		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		1.45		V	I_TM = 1000 A; Duty cPSTCle £ 0.01%; T_j = 25 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		800		A/ms	Switching from V_DRM£ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		200		A/ms	Switching from V_DRM£ 1000 V

ELECTRICAL CHARACTERISTICS AND RATINGS (cont`d)

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		-		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		-		W
Peak gate current	I_GM		-		A
Gate current required to trigger all units	I_GT		- 350 -		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT		- 3.0 -		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		-		V

Dynamic

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		-	0.7	ms	I_TM = 50 A; V_D = Rated V_DRM Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -50 V)	t_q		-	50	ms	I_TM = 1000 A; di/dt = 25 A/ms; V_R³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0; T_j = 125 ^oC; Duty cPSTCle ³ 0.01%
Reverse recovery charge	Q_rr		*		mC	I_TM = 1000 A; di/dt = 25 A/ms; V_R³ -50 V

* For guaranteed max. value, contact factory.

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_Q_(j-c)		0.025 0.050		^oC/W	Double sided cooled Single sided cooled
Thermal resistamce - case to sink	R_Q_(c-s)		0.010 0.020		^oC/W	Double sided cooled * Single sided cooled *
Mounting force	P	24.5	26.7		kN
Weight	W			480	g	About