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Rf power transistor TO-3 npn silicon transistor

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Transportation:
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Port:
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  • Product Description
Overview
Product Attributes

Model No.YZPST-2N6576

BrandYZPST

Supply Ability & Additional Information

Productivity1000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF


NPN Silicon Power Darlington Transistors 

YZPST-2N6576





Transistors  of FEATURES: 1.High Gain Darlington Performance  2. Built-in Diode Protection for Reverse Polarity Protection  

                                       3. Can Be Driven from Low-Level Logic  4. Popular Voltage Range




ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

60

V

 

Collector-Emitter Voltage

 

VCEO

 

60

 

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

15

A

Base Current

IB

0.5

A

Total Dissipation at

Ptot

120

W

 

Max. Operating Junction Temperature

Tj

120

oC

 

Storage Temperature

 

Tstg

 

-55~150

 

oC


 

Parameter

Symbol

Test  Conditions

Min.

Typ.

Max.

Unit

 

Collector Cut-off Current

ICEO

 

VCE = 60V, IB = 0

 

-

 

-

 

1.0

 

mA

Collector Cut-off Current

ICBO

VCB = 60V, IE = 0

-

-

0.5

mA

 

Emitter Cut-off Current

 

IEBO

 

VEB = 5.0V, IC = 0

 

-

 

-

 

2.0

 

mA

 

Collector-Emitter Sustaining Voltage

 

VCEO

 

IC = 30mA, IB = 0

 

60

 

-

 

-

 

V

DC Current Gain

 

hFE(1)

 

VCE = 3.0V, IC = 4.0A

 

2000

 

-

 

-

 

 

hFE(2)

 

VCE = 3.0V, IC = 10A

 

500

 

-

 

-

Collector-Emitter Saturation Voltage

VCE(sat)

 

IC = 10A, IB = 100mA

 

-

 

-

 

2.5

V

IC = 15A, IB = 150mA

 

-

 

-

4.0

 

Base-Emitter Saturation Voltage

 

VBE(sat)

 

IC = 10A, IB = 100mA

 

-

 

-

 

3.5

 

V

NPN Silicon Power Darlington Transistors YZPST-2N6576NPN Silicon Power Darlington Transistors YZPST-2N6576



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