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Model No.: YZPST-150B120F23
Brand: YZPST
Place Of Origin: China
VCES: 1200V
IC: 150A
ICRM: 300A
VGES: ±20V
Ptot: 968W
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000
Transportation: Ocean,Land
Supply Ability: 10000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Maximum junction temperature 175℃
Absolute Maximum Ratings
Parameter | Symbol | Conditions | Value | Unit |
Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25℃ | 1200 | V |
Continuous Collector Current | IC | Tc=100℃ | 150 | A |
Peak Collector Current | ICRM | tp=1ms | 300 | A |
Gate-Emitter Voltage | VGES | Tvj=25℃ | ±20 | V |
Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25℃ Tvjmax=175℃ | 968 | W |
IGBT Characteristics
Parameter Value Unit Symbol Conditions Min. Typ. Max. Gate-Emitter Threshold Voltage VGE(th) VGE=VCE, IC =4mA,Tvj=25℃ 5.2 6 6.8 V VCE=1200V,VGE=0V, Tvj=25℃ 1 mA Collector-Emitter Cut-off Current ICES VCE=1200V,VGE=0V, Tvj=125℃ 5 mA Collector-Emitter Ic=150A,VGE=15V, Tvj=25℃ 1.8 2.1 V Saturation Voltage VCE(sat) Ic=150A,VGE=15V, Tvj=125℃ 2 V Input Capacitance Cies 9.8 nF Output Capacitance Coes VCE=25V,VGE =0V, 0.82 nF Reverse Transfer Capacitance Cres f=1MHz, Tvj=25℃ 0.48 nF Internal Gate Resistance Rgint 2.5 Ω Turn-on Delay Time td(on) 185 Ns Rise Time tr IC =150 A 55 Ns Turn-off Delay Ttime td(off) VCE = 600 V 360 Ns Fall Time tf VGE = ±15V 115 Ns Energy Dissipation During Turn-on Time Eon RG = 5.1Ω 15.4 mJ Energy Dissipation During Turn-off Time Eoff Tvj=25℃ 11.6 mJ Turn-on Delay Time td(on) 200 Ns Rise Time tr IC =150 A 60 Ns Turn-off Delay Time td(off) VCE = 600 V 420 Ns Fall Time tf VGE = ±15V 120 Ns Energy Dissipation During Turn-on Time Eon RG =5.1Ω 23.2 mJ Energy Dissipation During Turn-off Time Eoff Tvj=125℃ 17 mJ Tp≤10us,VGE=15V, SC Data Isc Tvj=150℃,Vcc=600V, 500 A VCEM≤1200V
Diode Characteristics
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Diode DC Forward Current | IF | Tc=100℃ | 150 | A | ||
Diode Peak Forward Current | IFRM | 300 | A | |||
IF=150A,Tvj=25℃ | 1.8 | 2.3 | V | |||
Forward Voltage | VF | IF=150A,Tvj=125℃ | 1.85 | V |
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Recovered Charge | Qrr | 13.4 | uC | |||
IF =150 A | ||||||
Peak Reverse Recovery Current | Irr | VR=600V | 143 | A | ||
Reverse Recovery Time | trr | -diF/dt =2200A/us | 160 | ns | ||
Reverse Recovery Energy | Erec | Tvj=25℃ | 9.1 | mJ | ||
Recovered Charge | Qrr | 26.1 | uC | |||
IF =150 A | ||||||
Peak Reverse Recovery Current | Irr | VR=600V | 178 | A | ||
Reverse Recovery Time | trr | -diF/dt =2200A/us | 440 | ns | ||
Reverse Recovery Energy | Erec | Tvj=125℃ | 15.4 | mJ |
Module CharacteristicsTC=25°C unless otherwise specified
Parameter | Symbol | Conditions | Value | Unit | ||
Min. | Typ. | Max. | ||||
Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
Maximum Junction Temperature | Tjmax | 150 | ℃ | |||
Operating Junction Temperature | Tvjop | -40 | 125 | ℃ | ||
Storage Temperature | Tstg | -40 | 125 | ℃ | ||
per IGBT-inverter | 0.155 | K/W | ||||
Junction-to Case | R θjc | per Diode-inverter | 0.292 | K/W | ||
Case to Sink | R θcs | Conductive grease applied | 0.05 | K/W | ||
Module ElectrodesTorque | Mt | Recommended(M5) | 2.5 | 5 | N·m | |
Module-to-SinkTorque | Ms | Recommended(M6) | 3 | 5 | N·m | |
Weight of Module | G | 150 | g |
Package Dimensions
Product Categories : Semiconductor Module Devices > IGBT Module
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