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Higher energy 1200V 100A IGBT Module

$29

50-499
Piece/Pieces
$19.5

≥500
Piece/Pieces

option:

ICM:200A
VCES:1200V
IC TC = 25°C:200A
VGES:±30V
IC TC = 100°C:100A

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-G100HF120D1

Place Of Origin: China

VCES: 1200V

VGES: ±30V

IC TC = 25°C: 200A

IC TC = 100°C: 100A

ICM: 200A

PD: 430W

Tsc: > 10us

TJ: 150°C

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Transportation: Ocean,Land

Supply Ability: 100000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

1200V 100A IGBT Module P/N:YZPST-G100HF120D1

Features：
1200V100A,VCE(sat)(typ.)=3.0V Low inductive design
Lower losses and higher energy
Ultrafast switching speed
Excellent short circuit ruggedness
General Applications：
Auxiliary lnverter
Inductive Heating and Welding

UPS Systems

Equivalent Circuit Schematic

Absolute Maximum Ratings of IGBT

VCES	Collector to Emitter Voltage		1200	V
VGES	Continuous Gate to Emitter Voltage		±30	V
		TC = 25°C	200
IC	Continuous Collector Current	TC = 100°C	100	A
ICM	Pulse Collector Current	TJ = 150°C	200	A
PD	Maximum Power Dissipation (IGBT)	TC = 25°C,	430	W
tsc			> 10	µs
	Short Circuit Withstand Time		> 10	µs
	Maximum IGBT Junction Temperature		150	°C
TJ
TJOP
TJOP	Maximum Operating Junction Temperature Range		-40 to +150	°C
Tstg	Storage Temperature Range		-40 to +125	°C

VRRM	Repetitive Peak Reverse Voltage Preliminary Data		1200	V
		TC = 25°C	200
IF	Diode Continuous Forward Current	TC = 100°C	100	A
IFM	Diode Maximum Forward Current		200	A

Absolute Maximum Ratings of Freewheeling Diode

VRRM Repetitive Peak Reverse Voltage Preliminary Data 1200 V

TC = 25°C 200

IF Diode Continuous Forward Current TC = 100°C 100 A

IFM Diode Maximum Forward Current 200 A

Switching Characteristics of IGBT

td(on) TJ = 25°C 30

Turn-on Delay Time ns

TJ = 125°C 35

TJ = 25°C 50

tr Turn-on Rise Time TJ = 125°C 55 ns

TJ = 25°C 380

td(off) Turn-off Delay Time TJ = 125°C 390 ns

TJ = 25°C 110

tf Turn-off  Fall Time TJ = 125°C 160 ns

VCC = 600V TJ = 25°C 4.6

Eon Turn-on Switching Loss IC = 100A TJ = 125°C 5.7 mJ

RG  = 5.6Ω TJ = 25°C 3.1

Eoff Turn-off Switching Loss VGE = ±15V TJ = 125°C 5.1 mJ

Qg Total Gate Charge Inductive Load TJ = 25°C 870 nC

Rgint Integrated gate resistor f  = 1M; TJ = 25°C 1.9 Ω

Vpp = 1V

Cies Input Capacitance TJ = 25°C 8

VCE = 25V

Coes Output Capacitance VGE = 0V TJ = 25°C 1.35 nF

Cres Reverse Transfer f = 1MHz TJ = 25°C 0.81

Capacitance

RθJC Thermal Resistance, Junction-to-Case (IGBT) 0.29 °C/W

Package Dimension

Product Categories : Semiconductor Module Devices > IGBT Module

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td(on)			TJ = 25°C	30
	Turn-on Delay Time					ns


			TJ = 125°C	35
			TJ = 25°C	50
tr	Turn-on Rise Time		TJ = 125°C	55		ns
			TJ = 25°C	380
td(off)	Turn-off Delay Time		TJ = 125°C	390		ns
			TJ = 25°C	110
tf	Turn-off Fall Time		TJ = 125°C	160		ns
		VCC = 600V	TJ = 25°C	4.6
Eon	Turn-on Switching Loss	IC = 100A	TJ = 125°C	5.7		mJ
		RG = 5.6Ω	TJ = 25°C	3.1
Eoff	Turn-off Switching Loss	VGE = ±15V	TJ = 125°C	5.1		mJ
Qg	Total Gate Charge	Inductive Load	TJ = 25°C	870		nC
Rgint	Integrated gate resistor	f = 1M;	TJ = 25°C	1.9		Ω
Rgint	Integrated gate resistor	Vpp = 1V	TJ = 25°C	1.9		Ω
Cies	Input Capacitance		TJ = 25°C	8
Cies	Input Capacitance	VCE = 25V	TJ = 25°C	8
Coes	Output Capacitance	VGE = 0V	TJ = 25°C	1.35		nF
Cres	Reverse Transfer	f = 1MHz	TJ = 25°C	0.81
Cres	Capacitance		TJ = 25°C	0.81
RθJC	Thermal Resistance, Junction-to-Case (IGBT)				0.29	°C/W