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High-Frequency operation 1700V All-SiC Module

$790

5-19
Piece/Pieces
$660

≥20
Piece/Pieces

option:

ID Tc=100℃:200A
ID Tc=25℃:230A
VDSmax:1700V
VGSmax:-10V/+25V
VGSop:-5V/+20V

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Product Description

Product Attributes
Supply Ability & Additional Information
Packaging & Delivery

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Overview

Product Attributes

Model No.: YZPST-230B170F62

Brand: YZPST

Place Of Origin: China

VDSmax: 1700V

ID Tc=25℃: 230A

ID Tc=100℃: 200A

VGSmax: -10V/+25V

VGSop: -5V/+20V

TJ TSTG: -40℃+155℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000

Transportation: Ocean,Land

Supply Ability: 10000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery

Selling Units:: Piece/Pieces

Package Type:: 1. Anti-electrostatic packaging 2. Carton box 3. braid

All-SiC Power Module P/N:YZPST-230B170F62 SiC Module

VDS=1700V RDS(on)=7.5mΩ
Applications
Induction heating
Solar and wind inverters
DC/AC converters
Features
Ultra low loss
High-Frequency operation
Zero reverse recovery current from diode
Zero turn-off tail current from MOSFET
Normally-off,fail-safe device operation

Ease of paralleling

1700V 7.5 mΩ in one-package

Absolute Maximum Ratings (TC =25℃ unless otherwise specified)

Parameter
Parameter	Symbol	Conditions	Value	Unit
Drain-source voltage	VDSmax		1700	V
		VGS=20V, Tc=25℃	230
Continuous collector current	ID	VGS=20V, Tc=100℃	200	A
Gate- source voltage	VGSmax	Absolute maximum values	-10V/+25V	V
Gate-source voltage	VGSop	Recommended operational values	-5V/+20V	V
Operating Junction and Storage Temperature	TJ TSTG		-40~+155	℃

Electrical Characteristics (TC =25℃ unless otherwise specified)

Parameter			Value			Unit
Parameter	Symbol	Conditions	Min.	Typ.	Max.
Gate threshold voltage	VGSth	ID =108mA	2	2.6	4	V
Zero gate voltage drain current	IDSS	VDS=1700V,VGS=0V		6	600	uA
Gate-source leakage current	IGSS	VGS=20 V			1500	nA
		VGS=20V, IDS=230A		7.5	11.7	ma
On state resistance	RDS(on)	VGS=20V, IDS=230A,Tvj=150℃		15		ma
Input capacitance	Ciss			21.3		nF
Output capacitance	Coss	VGS=0V,VDS=1000V, VAC=25mV f=1MHz		0.99		nF
Reverse transfer capacitance	Crss			0.04		nF
Gate-source charge	QGS			324		nC
Gate-drain charge	QGD	VDS=1200V,VGS = +20V/-5V		150		nC
Total gate charge	QG	ID =300 A		1158		nC
Turn-on delay time	td(on)			27		ns
Turn-on delay time	td(on)	ID =180A		27		ns
Rise time	tr	VDS =1200V		32		ns
Turn-off delay time	td(off)	VGS = +20V/-5V		36		ns
Fall time	tf	RG= 2.5a		10		ns
Energy dissipation during turn-on time		ID =180A
	Eon	VDS =1200V		1.2		mJ
		VGS = +20V/-5V
		RG= 2.5a
Energy dissipation during turn-off time	Eoff	L=200uH		2		mJ
		IF=300A		1.6	1.9	V
Diode forward voltage	VSD	IF=300A,Tvj=150℃		2.2	2.8	V

Module Characteristics (TC =25℃ unless otherwise specified)

Parameter			Value
Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Case isolation voltage	Visol	t=1min,f=50Hz	2500			V
Maximum junction temperature	Tjmax				175	℃
Operating junction temperature	Tvj op		-40		150	℃
Storage temperature	Tstg		-40		125	℃
Module electrodes torque	Mt	Recommended(M6)	3		6
Module to heatsink torque	Ms	Recommended(M6)	3		6	Nm
Weight of module	G			300		g